EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
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An erasure system should be calibrated periodically.
IC Datasheet: 2716 EPROM – 1
Dataxheet times S 20 ns unless noted otherwise. The table of “Electrical Characteristics” provides conditions for actual device operation. This is done 8 bits a byte at a time. The programming sequence is: Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem.
Typical conditions are for operation at: The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. MMES may be programmed in parallel with the same data in this mode. A new satasheet can then be written into the device by following the programming procedure. Lamps lose intensity as they age.
EPROM Technical Data
Datasheft or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. Multiple pulses are not needed but will not cause device damage. All similar inputs of the MME may be par- alleled.
It is recommended that the MME be kept out of direct sunlight. The distance from lamp to unit should be maintained at 1 inch. Capacitance Is guaranteed by periodic testing. This exposure discharges the floating gate to its initial state through induced photo current.
All input voltage levels, including the program pulse on chip-enable are TTL compatible. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.
Table II shows the 3 programming modes. All bits will be at a “1” level output high in this initial state and after any full erasure. The MME is packaged in datqsheet pin dual-in-line package with transparent lid. Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. Extended datqsheet sure to room level fluorescent lighting will also cause erasure. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.
Datasyeet opaque coating paint, tape, label, etc. In- complete erasure will cause symptoms that can be misleading. To prevent damage the device it must not be inserted into a board with power applied. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern.
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When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring. Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.
No pins should be left open.
Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. The ratasheet time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.