BUZP datasheet, BUZP circuit, BUZP data sheet: SAVANTIC – Silicon NPN Power Transistors,alldatasheet, datasheet, Datasheet search site for. BUZP isc Silicon NPN Power Transistor. DESCRIPTIONHigh VoltageDARLINGTONIntegrated High Voltage Zener APPLICATIONSApplication in high. BUZP from STMicroelectronics, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.
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Datasheet Page , pdf datasheet & application note
No license is granted by implication or otherwise under any patent or patent rights of SGS. The power dissipation is equivalent to a non isolated SOT TO device mounted with external electrical isolation. For output rectification fast recovery power diodes page 55 are available. Two versions of the CPU are available to match the family to a wide range of target applications from fast process control to large microcomputers. Each device is presented along with its essential electrical characteristics.
Matching PWM control circuits may be found on pages 56 to In addition the availability of V devices offers extra margin for flyback topologies used at up to 50kHz. GNDi – Ground Common ground for input voltage.
For easy consultation the products have been divided into several sections according to the main application sectors. Ceramic Pin-grid arrays — 64,68,84, and leads. For low power applications SOT TO and TO-3 devices may be adequate but as power levels rise paralleling these devices causes various problems.
The SGS range of current capability and choice of packages are second to non.
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Datawheet – Ground Common ground for input voltage. They are in fact a large number of standard circuit elements, up to The customer designs and evaluates the proposed design with the help of a series of development parts, each containing one or more of the library cells.
On request virtually all devices are supplied in wafer form for hybrid assembly; SGS has established high volume experience in this service.
Individual transistors, diodes, capacitors and resistors can also be integrated. The products listed in the following pages represent only a part of the whole products range designed and manufactured by the SGS Subsystems group. These can be acquired through SGS sales network. Reset voltage is high 5. Over types planned. Pentawatt LA Power Op. If further information is required SGS will provide individual data sheets for all the devices on request. When the breadboard functions correctly SGS takes the final drawings and lays out the appropriate cells in the smallest possible silicon area.
The range covers consumer to military temperature ranges and is available in four packages options. With its fast turnaround time and low development cost gate arrays is the ideal solution for low production volume design. Fiberglass Pin-grid arrays — 64,68,84,, and leads. Plastic DIPS — 16,18,20,24,28,40 and 48 leads. Max 2 HSG 32 1 3 36 5.
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Southfield, Ml Civic Center Dr. New products will be introduced in the year: Max 2 HSG 44 52 1. All the products are supported by an extensive documentation that is available on request from your nearest SGS sales office or Distributor. The high speed Z80H features 8 MHz clock operation. If you are interested in discussing datashet chip designs contact your nearest sales office for more infor- mation.
Package V MHz Z 2. Lauderdale Orlando Kierulff Electronic Ft. The epitaxial base process provides cost effective complementary pairs of transistors, and for higher gain darlingtons.
The datadheet is electrically connected to GND.
Beijing Rm dataxheet, Beijing Hotel, Tel: A logic high level signal applied to this pin disables the module. Ceramic chip carriers — 28,44,52,68,84 and leads.